Total Pageviews

Pages

Saturday, June 11, 2011

Notes for an Introductory Course On Electrical Machines and Drives by E.G.Strangas

http://www.egr.msu.edu/~fzpeng/ECE320/ECE320-Notes-Part1.pdf
copy the link and paste on your adress bar or click on the title - notes for introductory course on elec. mach.

Contents


1 Three Phase Circuits and Power 1

1.1 Electric Power with steady state sinusoidal quantities 1
1.2 Solving 1phase problems 5
1.3 Threephase Balanced Systems 6
1.4 Calculations in threephase systems 9

2 Magnetics 15

2.1 Introduction 15
2.2 The Governing Equations 15
2.3 Saturation and Hysteresis 19
2.4 Permanent Magnets 21
2.5 Faraday’s Law 22
2.6 Eddy Currents and Eddy Current Losses 25
2.7 Torque and Force 27

3 Transformers 29

3.1 Description 29
3.2 The Ideal Transformer 30
3.3 Equivalent Circuit 32
3.4 Losses and Ratings 36
3.5 Perunit System 37
3.6 Transformer tests 40
3.6.1 Open Circuit Test 41
3.6.2 Short Circuit Test 41
3.7 Threephase Transformers 43
3.8 Autotransformers 44

4 Concepts of Electrical Machines; DC motors 47

4.1 Geometry, Fields, Voltages, and Currents 47

5 Threephase Windings 53

5.1 Current Space Vectors 53
5.2 Stator Windings and Resulting Flux Density 55
5.2.1 Balanced, Symmetric Threephase Currents 58
5.3 Phasors and space vectors 58
5.4 Magnetizing current, Flux and Voltage 60

6 Induction Machines 63

6.1 Description 63
6.2 Concept of Operation 64
6.3 Torque Development 66
6.4 Operation of the Induction Machine near Synchronous Speed 67
6.5 Leakage Inductances and their Effects 71
6.6 Operating characteristics 72
6.7 Starting of Induction Motors 75
6.8 Multiple pole pairs 76

7 Synchronous Machines and Drives 81

7.1 Design and Principle of Operation 81
7.1.1 Wound Rotor Carrying DC 81
7.1.2 Permanent Magnet Rotor 82
7.2 Equivalent Circuit 82
7.3 Operation of the Machine Connected to a Bus of Constant Voltage and Frequency 84
7.4 Operation from a Source of Variable Frequency and Voltage 88
7.5 Controllers for PMAC Machines 94
7.6 Brushless DC Machines 95

8 Line Controlled Rectifiers 99

8.1 1and 3Phase circuits with diodes 99
8.2 One Phase Full Wave Rectifier 100
8.3 Threephase Diode Rectifiers 102
8.4 Controlled rectifiers with Thyristors 103
8.5 One phase Controlled Rectifiers 104
8.5.1 Inverter Mode 104
8.6 ThreePhase Controlled Converters 106
8.7 *Notes 107


9 Inverters 109

9.1 1phase Inverter 109
9.2 Threephase Inverters 111

10 DC to DC Conversion 117

10.1 StepDown or Buck Converters 117
10.2 Stepup or Boost Converter 119
10.3 Buckboost Converter 122

Electronics and communications subject most important n frequently asked multiple choice questions of BEL,AAI,DRDO,JTO paper 2

SET - 2

1. Resistivity of silicon in ohms cm. is approx. equal to

a. 50 b. 1012 c. 230k d. 10-6


2. Rsistivity ofGermanium in ohms cm. is approx. equal to

a. 50 b. 10-12 c. 50k d. 10-6


3. The number of free electrons/cubic cm intrinsic Germanium at room temperature

is approx. equal to

a. 1.5*1010 b. 2.5*1013 c. 1000 d. 5*106


4. The number of free electrons/cubic cm of intrinsic silicon at room temperature is

approx. equal to

a. 1.5*1010 b. 2.5*1013 c. 10000 d. 5*106


5. The forbidden energy gap for silicon is

a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV


6. The forbidden energy gap for Germanium is

a. 1.1eV b. 067eV c. 0.97eV d. 1.7eV


7. N type material is formed by the addition of the following (penta valent )atom in n

to semiconductor material

a. Antimony

b. Arsenic

c. Phosphorous

d. Any of the above


8. P type material is formed by the addition of the following [Trivalent] atom tn to

semiconductor material

a. Boron b. Gallium c. Indium d. Any of the above


9. Impurity atoms that produces N type material by its addition in semiconductor is

called

a. Donar b. Acceptor c. Conductor d. Insulator


10. Impurity atoms that produces P type material by its addition in semiconductor is

called

a. Donar b. Acceptor c. Conductor d. Insulator


11. Dynamic resistance of a diode Rd is if voltage changes is DVd and the current

change is D Id

a. D Vd / D Id

b. D Id / D Vd

c. 1 / DVd

d. 1 / D Id


12. Point contact diodes are preferred at very high frequency, because of its low

junction

a. Capacitance and inductance

b. Inductance

c. Capacitance


13. Identify the circuit given below

a. AND gate

b. OR gate

c. Rectifier

d. NOR gate


14. Identify the circuit given below

a. AND gate

b. OR gate

c. Rectifier

d. NOR gate


15. DC value of a Half wave rectifier with Em as the peak value of the input is

a. 0.318Em

b. 0.418Em

c. 0.518Em

d. 0.618Em


16. Change in Zener voltage of 10V at 100o C if temperature co-efficient is 0.072%o

C as

a. 0.54 V b. 0.74 V c. 0.64 V d. 0.14 V


17. If Tc is th e% temperature co of / oC and Vz as zener voltage and T as change in

temperature then the change in zener voltage is

c. 100. Vz. Tc DT

d. None of these of the above


18. PIV for a full wave rectifier, if Em is the peak voltage is

a. Em b. 1.5Em c. 0.636Em d. 2Em


19. Schottky Barrier diodes becomes important at

a. DC level operation

b. Low frequency operation

c. High frequency operation

d. None of these


20. Clamping network is the one that will clamp the signal to a

a. Different peak value

b. Different DC level

c. Different polarity level

d. Different RMS level


21. Clipping network is the one that will clip a portion of the

a. Input signal without distorting the remaining portion

b. Input signal with distorting the remaining portion

c. Any of the above

d. None of these


22. Transition capacitance Ct of a Varicap diode with Knee voltage Vt, reverse

voltage Vr and K, the constant based on semiconductor material and the construction

technique & N dependent on type of junction is given by

a. 1 / K (Vt + Vr)N/2

b. 1 / K (Vt + Vr)N

c. K / (Vt + Vr)N

d. K / (Vt + Vr)1/N


23. Ct = K / (Vt + Vr)N where Vt Knee voltage, Vr reverse voltage, K manufacturing

dependent constant and N dependent on type of junction, for alloy junction the value

of N is

a. 1/3 b. 2/3 c. 1/2 d. 1/4


24. Ct = K / (Vt + Vr)N where Vt Knee voltage, Vr reverse voltage, K manufacturing

dependent constant and N dependent on type of junction, for diffused junction the

value of N is

a. 1/3 b. 2/3 c. 1/2 d. 1/4


25. In JFET, the drain current Id is given by (Idss drain – source saturation current

Vgs – Gate – source voltage, Vp the pinch off voltage)

a. Idss[1 – Vp/Vgs]

b. Idss(1 – Vgs/Vp)2

c. Idss[1 – Vgs/Vp)

d. Idss(1 – Vgs/Vp)3/2


26. The shadow mask in colour tube is used to

a. Reduce X-Ray emission

b. Ensure each beam hits its own dots

c. Increase screen brightness

d. Provide degaussing for the screen


27. Indicate which of the following signal is not transmitted in colour TV

a. Y b. Q c. R d. I


28. Another name for horizontal retrace in TV receiver is the

a. Ringing b. Burst c. Damper d. Fly back


29. Another name for the colour sync in the colour TV system

a. Ringing b. Burst c. Damper d. Fly back


30. The HV anode supply for a picture tube of a TV receiver is generated in the

a. Mains transformer

b. Vertical output stage

c. Horizontal output stage

d. Horizontal oscillator


31. The output of vertical amplifier is

a. Direct current

b. Amplified vertical sync pulse

c. A saw tooth voltage

d. A saw tooth current


32. In a transistor if Alpha = 0.98, current gain is equal to

a. 29 b. 59 c. 69 d. 49


33. The active region in the common emitter configuration means

a. Both collector and emitter junction is reverse biased

b. The collector junction is forward biased and emitter junction

c. The collector junction is reverse biased and emitter junction is forwared biased

d. Both collector & emitter junction are forward biased


34. The saturation region in the common emitter configuration means that

a. Both collector & emitter junction are reverse biased

b. The collector junction is forward biased and emitter junction

c. The collector junction is reverse biased and emitter junction is forwared biased

d. Both collector & emitter junction are forward biased


35. The % of Red, Green & Blue in 100% White Y is given by

a. 30%, 59%, 11%

b. 50%, 30%, 11%

c. 30%, 11%, 50%

d. 33.3%, 33.5%, 38.3%


36. Equalizing pulse width, if H is the Horizontal sync rate

a. 0.64 H b. 0.07 H c. 0.04 H d. 0.16 H


37. In a simple RC network the bandwidth is equal to

a. 1/2 p RC

b. RC / 2

c. 2 C / p R

d. 2 p / RC


38. The time constant of a RC network is given by

a. RC b. C/R c. R/C d. None of these


39. First zero crossing of pulse frequency spectrum occurs at if d is the pulse width,

T is the pulse repetition rate

a. 1/d b. d/T c. T/d d. T


40. The distortion less output characteristic of a network means

a. Constant amplitude and linear phase shift over frequency

b. Linear phase shift and amplitude need not be constant

c. Any amplitude and phase

d. None of these


41. Single sideband means suppressed

a. Carrier

b. Carrier and one side band

c. One side band

d. None of these


42. In an amplitude modulated signal, lower side band frequency is equal to (if the

carrier frequency is fc and modulation frequency is fm)

a. fm + fc b. fc – fm c. fm r fc d. fc / fm


43. Modulation index of the frequency modulation depends on

a. Amplitude & frequency of the modulation signal

b. Frequency and amplitude of carrier signal

c. Carrier frequency

d. None of these


44. The BW of the narrow band FM if modulating frequency is fm

a. 3 r fm b. 2 r fm c. 2.5 r fm d. 10 r fm


45. Reactance tube modulator is known for

a. FM b. AM c. PPM d. PAM


46. Bandwidth and rise time product is

a. 0.35 b. 0.45 c. 0.30 d. 0.49


47. Energy gap, Lg, for Germanium at room temp [300o K] is

a. 0.72eV b. 1.1eV c. 1.53eV d. 0.2eV


48. Volt equivalent of temperature VT, at 116o K is

a. 0.11V b. 0.01V c. 1.16V d. 0.1V


49. Reverse saturation current of a Ge.diode is in the range of

a. mA b. uA c. nA d. pA


50. Cut-in voltage V for silicon is approximately

a. 0.2V b. 0.6V c. 0.9V d. 1.1V


51. Every 10o C rise in temp. the reverse saturation current

a. Doubles

b. Halves

c. Triples

d. No change


52. Hall effect with reference to Metal or Semiconductor carrying a current I is placed

in a transverse magnetic field B, an electric field E is induced in

a. Parallel to B

b. Perpendicular to I

c. Perpendicular to both B & I

d. Perpendicular to B


53. 1 eV (electron volt) is equal to:

a. 1.9 r 10-20 J

b. 1.6 r 10-19 J

c. 1.6 r 10-20 J

d. 1.16 r 10-19 J


54. Donar impurity is having a valency of:

a. 2 b. 3 c. 4 d. 5


55. Acceptor impurity is having a valency of

a. 2 b. 3 c. 4 d. 5


56. Electron volt arises from the fact that if any electron falls through a potential of 1

volt, its kinetic energy will

a. Decrease, & potential energy will increase

b. Increase & potential energy decrease

c. Be unaltered & potential energy decreases

d. Increase & potential energy increase


57. Hole is created in a semiconductor material if one of following impurities are

added

a. Antimony

b. Arsenic

c. Indium

d. Phosphorus


58. Excess electron is created by

a. Boran

b. Gallium

c. Indium

d. Arsenic


59. A snubber circuit is used across the SCR to protect against

a. The di/dt of the anode current

b. The dv/dt turn on

c. L.di/dt of load inductance

d. None of these


60. Germanium has the valency of

a. 2 b. 3 c. 4 d. 5


61. Silicon has the valency of

a. 2 b. 3 c. 4 d. 5


62. Hole acts as a free charge carrier of polarity

a. Negative

b. Positive

c. Neutral

d. None of these


63. Burst signal in NTSC system is 8 cycles of the frequency of

a. Colour sub carrier

b. Picture carrier

c. Sound carrier

d. None of these


64. Colour sub carrier reference burst is superimposed on the

a. Back porch of the each horizontal sync pulse

b. Front porch of the each horizontal sync pulse

c. Front porch of the each vertical sync pulse

d. Back porch of the each vertical sync pulse


65. The law of mass action with reference to semiconductor technology states that

the product of free negative & positive concentration is a constant and

a. Independent of amount of donor and acceptor doping

b. Dependent on amount of donor and independent of the amount acceptor impurity

doping

c. Depend on amount of both donor & acceptor impurity doping

d. None of these


66. The snubber circuit used across SCR is a simple

a. R-L network

b. RLC network

c. LC network

d. RC network


67. To limit the rate of rise of SCR anode current a small

a. Inductor is inserted in cathode circuit

b. Inductor is inserted in anode circuit

c. Capacitor is inserted in anode circuit

d. Capacitor is inserted in cathode circuit


68. Torque developed by a DC servo motor is proportional to the

a. Product of power and time

b. Product of armature current and back emf

c. Armature voltage and armature current

d. Field voltage and field current


69. Proportional Integral control

a. Reduces steady state error but reduces the forward gain

b. Increases the forward gain and reduces the steady state error

c. Increases the steady state error and increases the forward gain.

d. None of these


70. Increasing the servo bandwidth:

a. Improves signal to noise ratio

b. Improves speed response and lowers signal to noise ratio

c. Improves power output

d. None of these


71. Notch filter is

a. Low pass filter

b. High pass filter

c. Narrow stop band filter

d. Narrow pass band filter


72. In TV Receivers the Electron beam deflection method used is

a. Electro static

b. Electro magnetic

c. Magnetic

d. All the above


73. In a line of sight communication the maximum range R in miles between the

receiver antenna and transmitter antenna of height H in feet is approximately

a. R = 1.93 ÖH

b. R = 1.23 ÖH

c. R = 1.53 ÖH

d. R = 2.03 ÖH


74. In wavelength of the 60 MHz carrier frequency is

a. 10 metres.

b. 15 metres

c. 5 metres

d. 2.5 metres


75. In standard TV receiving antenna the dipole element is

a. 0.5 of the wave length

b. 0.25 of the wave length

c. 1.5 of the wave length

d. 1.0 of the wave length


76. The characteristics of FET are similar to:

a. Triode

b. Tertode

c. Pentode

d. Diode


77. Charge coupled device is an array of capacitors whose structure is similar to:

a. Shift register

b. Flip-flop

c. NAND gate

d. Amplifier


78. Operational amplifier characteristics are which of the following:

a. Infinite gain

b. Infinite input impedance

c. Output impedance is zero

d. All of the above.


79. The typical value of the open loop gain in dB of an amplifier at DC with no

feedback is:

a. 90 to 100

b. 80 to 90

c. 0 to 50

d. 50 to 70


80. The 3 dB band width means the frequency at which

a. The open loop voltage gain reduced to 0.707

b. The open loop gain reduced to unity

c. Maximum voltage of a signal is without distortion

d. It is a medium wave band width of radio receiver


81. Rise time of an amplifier is defined as time required

a. To change from 0 to 100 % of its final value

b. To change from 0 to 50 % of its final value

c. To change from 10 to 90 % of its final value

d. To change from 10 to 100 % of its final value


82. High speed amplifier design emphasized on

a. Extremely small bandwidth

b. Very slow response

c. Unity gain bandwidth after 10 MHz

d. None of these


83. Tuned amplifier having the frequency range between

a. 150 KHz – 50 MHz

b. 100 Hz – 100 KHz

c. 100 KHz – 120 KHz

d. 50 MHz – 100 MHz

84. The resonance frequency of a tuned circuit made up of R, L, C is given by

a. 1/2 pÖLC

b. 2 pÖLC

c. 2 p / ÖLC

d. ÖLC / 2


85. The voltage follower can be obtained using operational amplifier

a. Without any feedback

b. Series parallel feedback of unity

c. Parallel feedback

d. Series feedback


86. Fidelity of the amplifier is when

a. It is a linear amplifier

b. It does not add or subtract any spectral components

c. It amplifier each component by the same amount

d. All of the above


87. What would be the output when two input sine waves of frequency 50 KHz and

100 KHz passed through an amplifier in the medium signal

a. 50 KHz and 100 KHz

b. 100 KHz and 200 KHz

c. 50 KHz and 150 KHz

d. All of the above


88. The important application of Schmitt trigger is

a. To convert slowly varying input voltage to abrupt voltage change

b. To convert abruptly varying input voltage into slowly varying output

c. To change the frequency of the input

d. None of these


89. Meaning of decoding is

a. Binary addition

b. Data transmission

c. Demultiplexing

d. Storage of binary information


90. Approximately how many number of gates are incorporated in SSL chip

a. 12

b. 100

c. Excess of 100

d. Excess of 1000


91. The circuit diagram represents which one of the following

a. Half adder

b. Full adder

c. Exor gate

d. AND gate


92. Flip flop cannot be called as

a. Bistable multivibrator

b. 1 Bit memory unit

c. latch

d. combinational circuit.


93. The important use of low pass filter in power supply is

a. To get the regulation in the output voltage

b. To filter out the ripple frequency

c. To increase the current rating

d. To convert AC into DC


94. Binary equivalent of the decimal number 145 is

a. 10010001

b. 1001011

c. 1010001

d. 1100010


95. In which of the following gate the output will be high when all the maintained at

high level

a. NOR

b. AND

c. NAND

d. EXOR


96. Which of the following definition is true in the De Morgan’s theorem

a. Multiplication symbols are replaced by addition symbol

b. Addition symbols are replaced by Multiplication symbol

c. Each of the terms are expressed in the complementary form

d. All of the above


97. 8421/BCD code fro a decimal number 149 is

a. 0001 0100 1001

b. 10010101

c. 10101001

d. None of these


98. Combinational circuit are mainly characterized by

a. Output depends upon the previous state & presents state

b. Output depends upon the input at that particular instant

c. Output depends upon the presents state & the clock state

d. Output does not depends upon the input at all


99. A flip flop is defined as

a. A bistable device with two complementary outputs

b. It is memory element

c. It will respond to input and it is a basic memory element

d. All of the above


100. Four bit code is called

a. Nibble

b. Byte

c. Word

d. Register



1. c

2. a

3. a

4. b

5. a

6. b

7. d

8. d

9. a

10. b

11. a

12. c

13. b

14. a

15. a

16. a

17. a

18. d

19. c

20. b

21. a

22. c

23. c

24. a

25. b

26. b

27. c

28. d

29. b

30. c

31. d

32. d

33. c

34. d

35. a

36. c

37. a

38. d

39. a

40. a

41. b

42. b

43. a

44. b

45. b

46. a

47. a

48. b

49. b

50. b

51. a

52. c

53. b

54. b

55. b

56. b

57. c

58. d

59. b

60. c

61. c

62. b

63. a

64. a

65. a

66. d

67. b

68. b

69. a

70. b

71. c

72. c

73. b

74. c

75. a

76. c

77. a

78. d

79. d

80. a

81. c

82. c

83. a

84. a

85. b

86. d

87. a

88. a

89. c

90. a

91. a

92. d

93. b

94. a

95. b

96. d

97. a

98. b

99. d

100.a